JFET VHF/UHF Amplifiers
N±Channel D Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain±Source Voltage
VDS
±30
Vdc
Drain±Gate Voltage
VDG
30
Vdc
Gate±Source Voltage
VGS
30
Vdc
Drain Current
ID
100
mAdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation @ TA
= 25
°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Storage Channel Temperature Range
Tstg
±65 to +150
°C
3 DRAIN
STYLE 22 STYLE 23
1 SOURCE
2
GATE
3 DRAIN
2 SOURCE
1
GATE
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate±Source Breakdown Voltage
(IG
= 1.0
μAdc, VDS
= 0)
V(BR)GSS
30
D
D
Vdc
Gate±Source
(VDS
= 15 Vdc, I
D
= 200
μAdc) BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
VGS
0.4
0.4
1.6
3.2
D
D
D
D
7.5
2.2
3.8
7.5
Vdc
Gate±Source Cutoff Voltage
(VDS
= 15 Vdc, I
D
= 10 nAdc)
VGS(off)
±0.5
D
±8.0
Vdc
Gate Reverse Current
(VGS
= 20 Vdc, V
DS
= 0)
IGSS
D
D
5.0
nAdc
ON CHARACTERISTICS
Zero±Gate±Voltage Drain Current
(VDS
= 15 Vdc, V
GS
= 0) BF245
(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
IDSS
2.0
2.0
6.0
12
D
D
D
D
25
6.5
15
25
mAdc
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
ON Semiconductor
?
Semiconductor Components Industries, LLC, 2001
June, 2001 ± Rev. 0
1
Publication Order Number:
BF245A/D
BF245A
BF245B
BF244A, BF244B
CASE 29±11, STYLE 22
TO±92 (TO±226AA)
1
2
3
BF245, BF245A,
BF245B, BF245C
CASE 29±11, STYLE 23
TO±92 (TO±226AA)
1
2
3